Abstract
Enhancement of photoluminescence (PL) intensity from InGaAs/GaAs quantum well (QW) is achieved experimentally by coupling surface plasmon (SP) resonance with QW emission. The SP resonance is generated by fabricating a periodic Au nanodisk array on top of InGaAs/GaAs QW structure. A thin layer of SiO(2) between Au nanodisk and GaAs surface has been employed to achieve easy adjustment of the SP resonance. A 4.16 fold enhancement of PL intensity was observed. Theoretical simulation results match well with the experimental results and confirm that the PL emission is enhanced by SP coupling with the fabricated structure.
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