Coupled-stripe AlxGa1−xAs-GaAs quantum well lasers defined by vacancy-enhanced impurity-induced layer disordering from (Si2)y(GaAs)1−y barriers

Abstract

Data are presented showing that high-performance (>100 mW) AlxGa1−xAs-GaAs quantum well heterostructure (QWH) coupled-stripe laser arrays can be realized by vacancy-enhanced impurity-induced layer disordering (IILD) employing an internal (Si2)y(GaAs)1−y barrier. This form of Si IILD (i.e., layer disordering from a ‘‘finite’’ internal Si source) results in coupled-emitter laser operation, even for relatively large stripe (7–10 μm) and spacing dimensions (2 μm), at currents just above threshold and higher. As a separate issue, the Si IILD QWH laser cross sections show that Si diffusion from a surface source is ‘‘slower’’ than the simultaneous vacancy diffusion from an SiO2 surface encapsulant (‘‘cap’’).