Abstract
The use of Si diffusion and impurity-induced layer disordering, via a Si3N4 mask pattern, to construct stripe-geometry AlxGa1−xAs-GaAs quantum well heterostructure lasers on n-type substrates is described. This leads to a convenient form of index-guided buried-heterostructure laser that is easily constructed and replicated (in various geometries) on commonly available n-type GaAs substrate.
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