Abstract
Using the results of a Monte Carlo simulation, a set of coupled Langevin equations for the relevant variables (the fraction of free carriers, their velocity and their energy) is constructed and applied to the case of p-type Si at 77 K under hot-carrier conditions. The relaxation and generalized-diffusion matrices, describing dissipation and fluctuations respectively, are evaluated. From these results, the authors derive a model spectral density of current fluctuations which is applied to interpret experimental noise spectra.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
