Counting x-ray line detector with monolithically integrated readout circuits

Abstract

The developed direct converting X-ray line detectors offer a number of advantages in comparison to other X-ray sensor concepts. Direct converting X-ray detectors are based on absorption of X-rays in semiconductor material, which leads to a generation of charge carriers. By applying high bias voltage charge carriers can be separated and with this the arising current pulse can be assessed by suitable readout integrated circuits (ICs) subsequently. The X-ray absorber itself is implemented as a diode based on GaAs to use it in the reverse direction. It exhibits low dark currents and can therefore be used at room temperatures. The GaAs absorber has a structured top electrode designed on variable bonding and high breakdown voltages. The implemented GaAs absorber exhibits a pixel size of 100 μm while the readout IC features fast dead-time-free readout, energy discrimination by two individually adjustable thresholds with 20 bit deep counters and radiation-hard design on chip level. These properties guarantee the application as fast and thus sensitive line detector for imaging processes. Another advantage of the imaging line detector is the cascadability of several sensor modules with 1024 pixels each. This property ensures that the 102.4 mm long sensor modules can be concatenated virtually with arbitrary length gaplessly. The readout ICs hitting radiation dose can be further minimized by implementing constructive steps to ensure longer lifetime of the sensor module. Furthermore, first results using the introduced sensor module for solid state X-ray detection are discussed.