Abstract
We present transport measurements on a tunable three-layer graphene single electron transistor (SET). The device consists of an etched three-layer graphene flake with two narrow constrictions separating the island from source and drain contacts. Three lateral graphene gates are used to electrostatically tune the device. An individual three-layer graphene constriction has been investigated separately showing a transport gap near the charge neutrality point. The graphene tunneling barriers show a strongly nonmonotonic coupling as a function of gate voltage indicating the presence of localized states in the constrictions. We show Coulomb oscillations and Coulomb diamond measurements proving the functionality of the graphene SET. A charging energy of ≈0.6 meV is extracted.
Highlights
Carbon materials, such as carbon nanotubes and graphene have attracted increasing interest in the past decades, which is mainly due to their unique electronic properties
We first discuss measurements on a single constriction. This structure has been fabricated from the same graphene flake as the single electron transistor (SET)
The investigated constriction has a width of ≈ 65 nm, as shown in the inset of Fig. 2(a)
Summary
Carbon materials, such as carbon nanotubes and graphene have attracted increasing interest in the past decades, which is mainly due to their unique electronic properties. (a) Conductance as a function of bias and back gate voltage for an individual threelayer graphene constriction (≈ 65 nm wide).
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