Abstract
Single electron transistor (SET) is a key element in current research area of nanoelectronics and nanotechnology which can offer nano-feature size, low power consumption and high operating speed. SET is a new nanoscale switching device. It can control the motion of the single electron. The goal of this paper is to discuss about some physical properties of the SET and focuses on simulation of basic quantum device characteristics such as tunneling effect, Coulomb blockage, Quantum dot, Coulomb staircase, and Coulomb oscillation. The current-voltage characteristics of SET are explored for illustration. Two types of metallic and semiconducting SETs have been simulated.
Highlights
Rapid progress in microelectronics has pushed the MOSFET ( dimension toward the physical limit (10 nm)
We introduce the physical properties of Single electron transistor (SET) and simulate current-voltage characteristics in single electron transistor by nonequilibrium Green’s function method using graphic user interface (GUI) of Matlab
We summarize the theoretical approach based on non-equilibrium Green’s function method (NEGF), review the capabilities of the simulator, NEMO-VN2 [19], give examples of typical
Summary
Rapid progress in microelectronics has pushed the MOSFET ( dimension toward the physical limit (10 nm). In the future it is probable that the nano-MOSFETs could be replaced by new fundamental devices such as single electron transistor (SET). SETs have attracted much attention for IC applications because of their nanofeature size, ultra-low power dissipation, high frequency, new functionalities, and CMOS compatible fabrication process [1]. After their discovery in the 1986 [2, 3], there has been extensive research on the fabrication, design and modeling of SETs [4]. We introduce the physical properties of SET and simulate current-voltage characteristics in single electron transistor by nonequilibrium Green’s function method using graphic user interface (GUI) of Matlab. TẠP CHÍ PHÁT TRIỂN KHOA HỌC & CÔNG NGHỆ: CHUYÊN SAN KHOA HỌC TỰ NHIÊN, TẬP 1, SỐ 6, 2017 simulations of SET’s current-voltage characteristics, and compare simulated results with experimental ones
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