Abstract
The one-dimensional Hubbard and Hubbard-Peierls models are studied for various regimes of band filling. A variational ansatz for the ground state is worked out for small values (on the scale of the bandwidth) of the on-site Coulomb interaction. It is shown that this term enhances the lattice dimerization in the half-filled band case, but suppresses the lattice distortion in the incommensurate case. The semiconductor-metal transition in doped polyacetylene is tentatively attributed to this effect. Parameter values extracted from properties of the undoped material yield a critical dopant concentration of about 3%.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
