Abstract
Semiconductor–metal transition in a square quantum wire of the GaAs/GaAlAs system is investigated within the effective mass approximation. Vanishing of the donor ionization energy as a function of well width and donor concentration suggests that no transition is possible below a well width of 7 nm . Critical impurity concentrations at which the transition occurs increase with reduction in well width. The effects of Anderson localization and correlation in the Hubbard model are included in a simple way. In general, the critical concentration is one order higher in the square quantum wire system when compared to a quantum well case for lower well widths. When well width is increased it reaches the bulk value in both the cases. The critical concentration is enhanced when a random distribution of impurities is considered.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
