Cost-efficient single photon-sensitive nanosecond gated spectrometer based on commercial grade image intensifier

Abstract

A commercial grade low-cost image intensifier was modified with a fast transistor gating circuit for time-resolved photoluminescence spectra and decay measurements. Gating exposure of 20 ns and spectral sensitivity in the 300–1000 nm range were achieved. Operation frequency in 5 Hz to 0.3 MHz range was verified by a pulsed laser diode. Pulsed repetitive image detection was integrated on a cooled CMOS camera. High dynamic range and wide spectral resolution were achieved. The thermal noise, reduced by three orders of magnitude at -16°C cooling and a high gain of 104, allowed single photon detection. Application of the spectrometer for sensitive photoluminescence decay measurements at pulsed laser excitation was performed on MAPbBr3 perovskite and CsI(Tl) scintillator crystals. The decay lifetimes of 400–600 ns and 100–6000 ns were determined, respectively. CsI(Tl) scintillator showed much stronger x-ray luminescence intensity due to larger defect density.