Cost-effective, high-volume molecular beam epitaxy using a multi 6-in wafer reactor

Abstract

The rapidly expanding market of wireless communication has drastically increased the demand for GaAs-based devices and circuits. This demand has driven the industry to increasingly larger diameter substrates for cost-effective, high-volume production. IQE Inc., a division of IQE plc has recently developed the technology to grow epitaxial structures on 150 mm (6-in) GaAs substrates using a multi 6-in wafer MBE platform with material characteristics exceeding those achieved on a multi 4-in platform. The new platform is configured to produce four 6-in epiwafers per platen and is projected to produce up to 21 000 wafers per year. This paper presents the methodology that was chosen to qualify the reactor for production. Discussions focus on machine performance, material quality, and capability. In-depth discussions of capacity, throughput, and reproducibility are included. The advantages of using statistical process control for high-volume production are presented.