Abstract
The process of integrated-circuit contact formation based on Ti−Co alloy with low content of cobalt has been investigated. By AES and XRD it is shown that nitrogen doping of the alloy film during magnetron deposition and its subsequent annealing at 800–850°C allow simultaneously to obtain a CoSi2 contact layer and a diffusion barrier layer on the basis of TiN. Electrical characteristics of Schottky barrier and ohmic contacts have been studied.
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