Abstract
A study is presented of the effects of anneal temperature on the electrical characteristics of nickel-based ohmic contacts to beta -SiC. Patterned metal structures on SiC films were annealed at temperatures ranging from 400 to 1200 degrees C, and electrically probed. The lowest contact resistance was 1.41*10/sup -4/ Omega cm/sup 2/ at 1000 degrees C.
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