Abstract
In order to eliminate the disadvantages of the Ti interlayer technique in forming epitaxial CoSi 2 films on (1 0 0)Si substrates, a new kind of Ti-capping layer method was employed to grow CoSi 2 films on (1 0 0)Si substrates. In this study, a layer of (2 0 0) textured Co film covered with a Ti-capping layer was annealed by rapid thermal annealing at different temperatures. X-ray diffraction patterns showed a (2 2 0) preferred orientation of CoSi 2 and the skipping of the intermediate phase Co 2Si in the Ti-capped sample. The mechanism of the formation (2 2 0) preferred CoSi 2 film was discussed and uncapped samples were used as counterparts to illuminate the effects of the Ti-capping layer.
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