Corrosion Resistance of Atomic Layer Deposition-Generated Amorphous Thin Films.

Abstract

Atomic layer deposition (ALD) was used to prepare amorphous thin films of Al2O3, Nb2O5, and Ta2O5 on both silicon substrates and aluminum blocks. Etch rates in 10 M NH4OH were determined from X-ray reflectometry data collected as a function of time. Amorphous Al2O3 thin films were found to have an etch rate of 0.5 nm min-1 and an increase in roughness of ∼0.01 nm min-1. Electron microscopy data showed etch pits, consistent with the increase in roughness. Amorphous Nb2O5 and Ta2O5 films showed no appreciable etching or roughening over the course of a ∼500 h continuous immersion. An Nb2O5-coated aluminum block showed no corrosion after immersion in 10 M NH4OH for over 200 h, suggesting that the coatings were pinhole-free. These results suggest that amorphous ALD thin films of Nb2O5 and Ta2O5 are candidates as barrier layers for aluminum in caustic environments.