Abstract
The effects of variations in processing on the thickness of an interfacial oxide and the resistance between W contact films and a doped Si-Ge alloy have been investigated. Auger electron spectroscopy in conjunction with sputter profiling indicated that the native interfacial oxide film could be reduced by 50% with an HF etch immediately prior to deposition of the W film. The interfacial oxide was found to thicken by approximately one monolayer upon being heated to 400 °C for 3 h in a sputtering vacuum chamber with a 3 × 10 -2 Torr argon atmosphere. This was correlated with a doubling in the contact resistance. The manner in which interface oxide could cause this increase in contact resistance is discussed.
Published Version
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