Abstract
A thermal-mapping technique is presented which, when applied to a p-n junction, can locate hot spots that are only slightly warmer than surrounding regions. Among the Zn-diffused GaAs devices to which this method has been applied, these hot spots have always been found to be associated with an irregularity (usually a microplasma) in the I-V characteristic. Furthermore, etching has revealed a crystal imperfection coinciding with each hot spot. Selective etching at these sites causes the removal of the imperfect region and a corresponding significant improvement in the diode reverse characteristic, though less than 4% of the total diode area has been removed.
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