Abstract
We have carried out spatially resolved micro-Raman spectroscopy, cathodoluminescence microscopy and scanning capacitance microscopy in order to obtain a comprehensive understanding about the properties of different domains formed in epitaxial laterally-overgrown GaN. For this purpose a spherical pit was fabricated into the sample by mechanical grinding and polishing, penetrating through to the buffer layer at its center. We found areas showing sharp excitonic luminescence corresponding to local free-carrier concentrations n below 10 17 cm -3 as well as domains exhibiting broad luminescence originating from recombination of a doping plasma with n reaching 10 19 cm -3 . Simultaneously, we observed in the scanning microscopy investigations a substructure which could be explained by the existence of internal space charge regions.
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