Abstract
ABSTRACTPr0.5Ca0.5MnO3(PCMO) films were deposited on LaAlO3(100) substrates under pressure from 1.33 to 5.33 Pa by RF magnetron sputtering. Resistance switching and dielectric functions of PCMO films were studied by DC current-voltage characteristic measurements and spectroscopic ellipsometry (SE) measurements. Resistance switching was observed in the devices composed of PCMO films deposited under low pressures of 1.33 and 2.67 Pa. SE measurements revealed that dielectric functions also depended on deposition pressure. PCMO films deposited under lower pressure had larger high-frequency dielectric constant, larger oscillator strength of the electric dipole charge transitions in MnO6octahedral complexes, and lower oscillator strength ofd-dtransitions in Mn3+and Mn4+ions. SE measurements suggested that oxygen vacancies and MnO6octahedral complexes play an important role in resistance switching in PCMO films.
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