Abstract
Porous GaAs was formed by electrochemical etching of n-type GaAs wafers in HF- or HCl-based solution with different current densities. The porous structure formation has been confirmed by scanning electron microscopy and x-ray diffraction. The samples were subjected to Raman and photoluminescence (PL) spectroscopic investigations. Our results show that the spontaneous emission is originated from extremely small structures. As the porosity increases, there is an increase of the luminescent peak, lower energy shifting of the Raman feature, exhibiting broadening and decreased of first-order longitudinal optic mode peak intensity. In addition, the intensity of the transverse optic (TO) mode was highly enhanced and its peak was broadened due to the breakdown of the polarization selection rule in the case of high-porosity samples. Two new peaks around 200 and 233 cm−1 were observed, which were attributed to α-As and TO-Ga-As-a respectively. Both Raman and PL results were explained using quantum confinement models. There is reasonable agreement between the results obtained from PL and Raman spectroscopic investigations of the etched GaAs samples.
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