Abstract
Porous GaAs (π‐GaAs) was obtained using conventional electrochemical etching method with constant current density of 15 mA/cm2 for 30 min in electrolytes consisting of aqueous HF and ethanol C2H5OH (1:4). Afterward the silver (Ag) layer was sputtered onto π‐GaAs with the thickness about 10nm using RF sputtering and then underwent thermal annealing process with different temperatures at 600° C, 700° C and 800° C. The silver nanoclusters formation with different sizes has been confirmed by scanning electron microscopy (SEM), photoluminescence (PL) and Raman measurements. The emission efficiencies by combining the metal nanostructure onto the π‐GaAs substrate using thermal annealing treatment produced a numbers of peaks in the PL spectra as an indication of the different shapes of the particle. The surface‐plasmon (SP) propagation along metal/surface is determined by various factors such as the size and shape of metal islands. The multimode spectra of Raman peaks around 200, 233 and 265 cm−1 originated from hexagonal arsenic (α‐GaAs), TO‐Ga‐As‐α and transverse optical (TO) mode were observed. In addition a strong mode seen around 1582 cm−1 of transmission spectra was attributed to the silver nanoparticles.
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