Abstract
The quality of epitaxial graphene on silicon (GOS) is negatively correlated with the residual stress of the 3C-SiC films grown on the Si substrates. This has been systematically demonstrated by use of a series of 3C-SiC films formed on Si(110) substrates with varied residual stress. The residual stress of the3C-SiC film and the grain size of graphene were estimated with Raman-scattering spectroscopy while the crystallinity of the3C-SiC filmwasevaluated by x-ray diffraction. The more it reduces the residual stress the better the GOS quality it becomes. In particular, use of the rotated epitaxial film of 3C-SiC formed on Si(110) substrate, which gives the lowest residual stress, is found to produce a graphene with one of the best quality ever obtained in GOS. The revealed GOS quality improvement opens new opportunities for the production of high-performance GOS-based devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IOP Conference Series: Materials Science and Engineering
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
