Abstract

Our previous studies have reported the excitation energy dependence of the 2.7 and 4.3eV photoluminescence (PL) bands in oxygen deficient silica glass at low temperature (∼20K). An oxygen vacancy (O3SiSiO3) was thought to be the origin of the two PL bands. In order to verify the origin of the 2.7 and 4.3eV PL bands in silica glass, we measured the PL band of various thermally heat treated silica glasses. In the sample after heat treatment, we did not observe the 4.3eV PL band, though we did observe the 2.7eV PL band. These results suggest that these two PL bands do not have a common origin.

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