Abstract
A positive correlation between set voltage, Vset, and the preceding reset voltage, |Vreset|, has been observed in resistive RRAM memory arrays and explained in terms of mechanisms responsible for forming and rupturing of the conductive Cu filament. This correlation can be reproduced on a single device by generating a spread in Vreset values by varying the linear voltage ramp rate. The dependence of Vreset on voltage ramp rate can be modeled by assuming that critical Joules heat is needed to trigger the rupture of the filament. Mechanisms are proposed to explain why higher |Vreset| necessarily leads to a higher Vset value during a subsequent set operation. The resulting dependence of Vset and Vreset on the voltage ramp rate during the reset operation can be used to tighten Vset and Vreset distributions, by applying low voltage ramp rates to cells with high Vset and high ramp rates to cells with low Vset values.
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