Abstract
GaMnN films grown by metal-organic chemical vapor deposition were studied by photoluminescence (PL) spectroscopy and hysteresis measurements. Depending on the growth conditions of these GaMnN films, hysteresis measurements along the easy axis of magnetization show a transformation from magnetic to nonmagnetic behavior. The PL spectra of both magnetic and nonmagnetic GaMnN films exhibited GaN band edge and deep-level impurity transitions at 3.4 and 1.3eV, respectively. The PL emission intensity of the 1.3eV emission peak is stronger considerably for magnetic GaMnN films and is believed to be due to the Mn3+ intraband transition.
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