Abstract
We have developed a non-destructive technique, based upon scanning photoluminescence, which is capable of qualifying GaAs semi-insulating substrates used for the fabrication of large scale integrated circuits. The optical results (microscopic fluctuations of the integrated photoluminescence intensity) have been quantitatively correlated with a-posteriori electrical procedure called the dense row pattern procedure which determines the microscopic and macroscopic fluctuations of the MESFET's threshold voltage.
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