Abstract
We have determined the interface state density at each interface in a series of GaAs/AlGaAs multilayer heterostructures using capacitance-voltage profile simulation. We find that the values obtained correlate to the interface recombination velocities determined by time resolved photoluminescence and also to the strength of excitonic transitions observed in steady-state photoluminescence. The optical data therefore support the validity of our results. The results show that the interface state density follows a trend that decreases with the growth of each successive interface thereby supporting the view that the interfaces act as gettering planes for impurities during growth. In addition, the parallel application of electrical and optical techniques has allowed us to estimate the activation energy and minority carrier capture cross section of the dominant recombination centers.
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