Abstract

An effect of the carrier recombination process in silicon materials on the microwave reflection coefficient is analyzed in the frequency domain. The process is described using a Shockley-Hall-Read (SHR) single level recombination model. Carrier recombination kinetics is characterized with four parameters, surface recombination velocity, activation energy, minority carrier capture cross section and concentration of the recombination centers. These parameters are evaluated for p-type FZ and CZ silicon wafers contaminated with Cu, Ni, and Fe based on the Nyquist plots. In the evaluation procedure a nonlinear simplex method is used for fitting the experimental data to the model.

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