Abstract
Temperature of a commercial AlGaInP/GaInP quantum well laser diode (LD) is measured using two methods: peak wavelength shift and the diode voltage drop caused by working current. Time evolutions of temperature obtained by the two methods during the LD self-heating are measured and compared. No significant difference between the thus obtained temperature evolutions is obtained. Correlation between the LD voltage drop and the laser radiation frequency is established using a simple four-level semiconductor laser scheme and the LD gap energy is estimated. The LD gap energy decreases from 1.66 eV to 1.56 eV for temperature increase of 21 K, at close to room temperature. It is found that LD's frequency decrease is caused by the gap energy decrease.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
