Abstract
Silicon nanocrystals embedded in a silicon oxide matrix were deposited by radio frequency reactive magnetron sputtering. By means of Raman spectroscopy, we have found that a compressive stress is exerted on the silicon nanocrystal cores. The stress varies as a function of silicon concentration in the silicon-rich silicon oxide layers varies, which can be attributed to changes of nanocrystal environment. By conducting the Fourier transform infrared absorption experiments, we have correlated the stresses exerted on the nanocrystal core to the degree of matrix structural order.PACS78.67.Bf, 78.67.Pt, 73.63.Bd, 78.47.D, 74.25.Nd
Highlights
Silicon nanocrystals (Si-NCs) embedded in a silicon-rich silicon oxide (SRSO) have been extensively studied due to their promising applications in the third generation tandem solar cells [1], light-emitting diodes [2], or silicon-based lasers [3]
We investigate the correlation between short-range structural order of the matrix and stress exerted on the Si-NCs by means of the Raman and Fourier transform IR (FTIR) spectroscopy
In conclusion, we have shown that compressive stress is exerted on Si-NCs in SRSO samples deposited by radio frequency reactive magnetron sputtering
Summary
Silicon nanocrystals (Si-NCs) embedded in a silicon-rich silicon oxide (SRSO) have been extensively studied due to their promising applications in the third generation tandem solar cells [1], light-emitting diodes [2], or silicon-based lasers [3]. It has been shown that various defects present in the matrix may quench the emission originated from Si-NCs due to non-radiative recombination [5] This is a serious problem from the point of view of applications, especially in the case of light-emitting devices. The amount of stress exerted on the nanocrystal is connected to the Si-NCs size [6] as well as to the number of oxygen per interface silicon [7] These structural parameters can be controlled during deposition process by varying the excess silicon concentration in the SRSO matrix [8]. We conclude that from the point of view of applications, a compromise has to be considered between good structural quality of the matrix and Si-NCs size
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