Abstract
Silicon nanocrystals embedded in an oxide matrix formed in a multilayerarchitecture were deposited by the magnetron sputtering method. By means ofRaman spectroscopy we have found that compressive stress is exerted on thesilicon nanocrystal core. The stress varies as a function of silicon concentration (O/Si ratio) in the silicon-rich oxide (SRO) layers, which can be attributed to the changingnanocrystal environment. By conducting the time-resolved spectroscopy experiment, wedemonstrate that, depending on the nanocrystal surroundings, a different amount ofnonradiative recombination sites participates in the excited carrier relaxationprocess, leading to changes of the relative quantum yield of photoluminescence.
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