Abstract
A correlation between field effect mobility and an accumulation conductance has been investigated at 4H-SiC MOS interface with barium. 4H-SiC n-channel MOSFETs and n-type MOS capacitors were fabricated with a barium-introduced SiO2 and a conventional dry SiO2. The field effect mobility was enhanced by introducing the barium-introduced SiO2. It is found that there is a linear correlation between the mobility and the accumulation conductance. The MOS interface of the barium-introduced SiO2 had a lower interface state density of 2×1011 cm-2eV-1 than that of the conventional dry SiO2.
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