Abstract
The advantages of scanning capacitance microscopy (SCM) in observing Fe–Zn interdiffusion of an electro-absorption (EA) modulator and the relationship between the interdiffusion and device characteristics are discussed. SCM images show that there is a Zn diffusion region, in which the semi-insulating region is converted into p-type due to Zn diffusion, on both sides of the mesa and the Zn diffusion region becomes smaller as the Fe doping concentration is reduced. By comparison, scanning electron microscopy (SEM) images captured after stain etching of EA modulators did not clearly delineate the Zn diffusion front. The influence of a ruthenium (Ru)-doped InP burying layer on the interdiffusion has also been investigated by SCM. These results indicate that in order to improve the performance of EA modulators, it is important to prevent Zn diffusion into the semi-insulating layers.
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