Correlating the electronic structures of β-Ga2O3 to its crystal tilts induced defects at nanoscale

Abstract

Crosslinking structural transformation mechanism at nanoscale to the corresponding anisotropically electronic properties is essential to both the atomic-level controlled synthesis and extreme-conditional applications of the ultrawide bandgap semiconductors. Here, we report the first direct observation of bandgap variation at certain microstructural flaws in monoclinic crystal β-Ga2O3 via scanning transmission electron microscopy-electron energy loss spectrum (STEM-EELS) technology with both high energy and spatial resolution. Atomic-scale tilt of the Mosaic blocks relative to [010] zone axis is demonstrated to cause specific point defects accumulation at block boundaries, resulting in the formation of vacancy lines (or clusters) and then the crystal deformation induced flaws. These as-formed tiny Mosaic tilts observed from both in-plane and out-of-plane geometry are correlated to the corresponding electronic structure obtained by density functional calculations, indicating the carrier mobility limits transferred from intrinsic polar optical phonon scattering to the ionized oxygen atoms scattering in the defective monoclinic crystal. These findings provide a new insight on these anisotropic defect formation induced electronic structural variation, paving the way for precise synthesis and development of high-performance ultra-wide bandgap materials.