Correlating Raman peak shifts with phase transformation and defect densities: a comprehensive TEM and Raman study on silicon

Abstract

AbstractSilicon is the most often used material in micro electromechanical systems (MEMS). Detailed understanding of its mechanical properties as well as the microstructure is crucial for the reliability of MEMS devices. In this paper, we investigate the microstructure changes upon indentation of single crystalline (100) oriented silicon by transmission electron microscopy (TEM) and Raman microscopy. TEM cross sections were prepared by focused ion beam (FIB) at the location of the indent. Raman microscopy and TEM revealed the occurrence of phase transformations and residual stresses upon deformation. Raman microscopy was also used directly on the cross‐sectional TEM lamella and thus microstructural details could be correlated to peak shape and peak position. The results show, however, that due to the implanted Ga+ ions in the lamella the silicon Raman peak is shifted significantly to lower wavenumbers. This hinders a quantitative analysis of residual stresses in the lamella. Furthermore, Raman microscopy also possesses the ability to map deformation structures with a lateral resolution in the submicron range. Copyright © 2009 John Wiley & Sons, Ltd.