Correction to tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition.

Abstract

ADVERTISEMENT RETURN TO ISSUEPREVAddition/CorrectionORIGINAL ARTICLEThis notice is a correctionCorrection to Tailoring the Interface Quality between HfO2 and GaAs via in Situ ZnO Passivation Using Atomic Layer DepositionYoung-Chul Byun, Sungho Choi, Youngseo An, Paul C. McIntyre, and Hyoungsub Kim*Cite this: ACS Appl. Mater. Interfaces 2015, 7, 13, 7445Publication Date (Web):March 30, 2015Publication History Published online30 March 2015Published inissue 8 April 2015https://doi.org/10.1021/acsami.5b02372Copyright © 2015 American Chemical SocietyRIGHTS & PERMISSIONSArticle Views361Altmetric-Citations2LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InReddit PDF (169 KB) Get e-Alerts Get e-Alerts