Abstract
The results of studies of the interface of Ge with fluorides of Dy, La, and Sm in the metal-insulator-semiconductor structure are reported. The character of the energy spectrum and density of surface states for the interface of Ge with various fluorides of rare-earth elements is determined. For this purpose, the comparative analysis of the results obtained based on two methods, namely, the methods of current-voltage and capacitance-voltage characteristics, was carried out. The analysis showed that the information found from the current-voltage characteristics should be corrected taking into account the results obtained using other measurements, for example, the capacitance-voltage characteristics. This comparison also provided additional data on the properties of the interface; specifically, the thickness of the layer of the tunneling-thin insulator was determined.
Published Version
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