Abstract

The formulation of the correction factor for resistivity measurement using four-point probe has been reviewed. Generally, the typical concern in nanotechnology is the decreasing size and thickness of sample under study as well as the challenge faced in getting a correction factor value of resistivity in four-point probe technique. In this paper, an accurate calculation algorithm is presented to calculate the correction factor for arbitrary configuration of four-point probe method based on a generalized formalism using Laplace’s equation. The computed values of correction function are found to achieve precision of maximum fractional errors below 10−16 with numbers of summation terms less than 100. The general correction factor formulae can be applied to the measured resistivity of the sample grown on insulating or on conducting substrates using linear or non-linear four-point probe. The values of the correction factors are presented in the form of log–log graphs for handy references.

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