Abstract
Correction for ‘Epitaxial growth of GaN films on unconventional oxide substrates’ by Wenliang Wang et al., J. Mater. Chem. C, 2014, 2, 9342–9358.
Highlights
Correction for ‘Epitaxial growth of GaN films on unconventional oxide substrates’ by Wenliang Wang et al, J
The correct version of this table is given below with the revised values given in bold for clarity
The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers
Summary
Correction for ‘Epitaxial growth of GaN films on unconventional oxide substrates’ by Wenliang Wang et al, J. Correction: Epitaxial growth of GaN films on unconventional oxide substrates
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