Abstract
Semiconducting and corrosion properties of the plasma electrolytic oxidation treated AM50 magnesium alloy was correlatively investigated as a function of Cl⎺ content. Semiconducting character transitioned from p – type (for 0.01 M Cl⎺) to n – type (for both 0.1 and 1 M Cl⎺). Corrosion potential moved progressively to noble potential with the increase in Cl⎺ content. Variations of impedance modulus at lowest frequency employed (|Z|0.1 Hz), resistance of inner barrier layer (RIL), and corrosion current density with the Cl⎺ content were correlated with the variations of the defect density, change in Ecorr – Efb. and thickness of space charge layer.
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