Abstract
In(x)Ga(1-x)As wurtzite nanoneedles are grown without catalysts on silicon substrates with x ranging from zero to 0.15 using low-temperature metalorganic chemical vapor deposition. The nanoneedles assume a 6 degrees - 9 degrees tapered shape, have sharp 2-5 nm tips, are 4 microm in length and 600 nm wide at the base. The micro-photoluminescence peaks exhibit redshifts corresponding to their increased indium incorporation. Core-shell InGaAs/GaAs layered quantum well structures are grown which exhibit quantum confinement of carriers, and emission below the silicon bandgap.
Highlights
Integration of III-V optoelectronic materials with Si CMOS processing is an important area of research for realizing active optoelectronic devices integrated with Si electronics, those that operate at silicon-transparent wavelengths
InxGa1-xAs wurtzite nanoneedles are grown without catalysts on silicon substrates with x ranging from zero to 0.15 using low-temperature metalorganic chemical vapor deposition
The micro-photoluminescence peaks exhibit redshifts corresponding to their increased indium incorporation
Summary
Integration of III-V optoelectronic materials with Si CMOS processing is an important area of research for realizing active optoelectronic devices integrated with Si electronics, those that operate at silicon-transparent wavelengths Devices such as lasers, LEDs and photodetectors require low defect densities and the ability to grow heterostructures. The NNs are single-crystal wurtzite, free of twinning defects, and are not constrained by lattice-mismatch critical diameters, contrary to nanowire vapor-liquid-solid growth. They can be large enough to facilitate device fabrication using top-down, standard processing techniques. The NNs retain their sharp tips, narrow tapers and are single-crystal wurtzite These QW structures exhibit 8 x brighter photoluminescence (PL) than our typical GaAs NNs, indicating quantum confinement of carriers. The ability to grow these III-V heterostructures on silicon with bandgaps below the silicon band edge paves the way for bandgap tunability of integrated optoelectronic devices for applications such as lasers, detectors, and other devices, which allow for use of silicon waveguides
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