Abstract
Photoemission is used to study the interaction of H 2 (for oxide removal) and N 2 (for nitridation) plasmas with native oxide covered GaAs(100) surfaces. H 2 plasmas completely suppress the As oxide but leave a substantial amount of Ga oxide on the surface. A thin (2 nm) Ga and As nitride layer is formed by exposure to an N 2 plasma. In contrast with plasma nitrided MBE grown surfaces, no significant (above 0.2 eV) Fermi level movement is induced by this treatment.
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