Abstract
Thermal diffusion of copper in a Cu/TaN/Si-sub sample was investigated after annealing at 630°C for 60 min. The interface morphology, copper silicide grains and SiO2 thin layer were observed using high resolution transmission electron microscope (HRTEM). Depth profiles were obtained with an energy dispersion X-ray spectrometer (EDS) assembled in the TEM system. Based on the grain boundary theory of Fisher and the approximation solution of Le Claire, thermal diffusivity of copper into the tantalum nitride layer was estimated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
