Abstract
In this paper, we have investigated the behaviors of Cu precipitation in multi-crystalline silicon by intentionally contaminating. It is found that, the Cu impurities are easily gettered at the structural defects, i.e. grain-boundaries and dislocations. However, in the defect-free region, the Cu impurities tend to form different kinds of precipitates, strongly dependent on the contamination level. The dot-like precipitates are often formed in the samples with low temperature contamination, and the star-like ones in the samples with high temperature contamination. The microwave photoconductivity decay measurements indicate that the Cu precipitates have strong recombination activity, significantly reducing the minority carrier lifetime.
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