Abstract
Top-contact Copper phthalocyanine (CuPc) thin-film field-effect transistor (TFT) with SiO 2/Ta 2O 5/SiO 2 (STS) multilayer as the dielectric was fabricated and investigated. With the multi-layer dielectric, drive voltage was remarkably reduced. A relatively large on-current of 1.1 × 10 − 7 A at a V GS of −15 V was obtained due to the strong coupling capability provided by the STS multilayer gate insulator. The device shows a moderate performance: saturation mobility of μ sat = 6.12 × 10 − 4 cm 2/V s, on-current to off-current ratio of I on/ I off = 1.1 × 10 3, threshold voltage of V TH = −3.2 V and sub-threshold swing SS = 1.6 V/dec. Atomic force microscope images show that the STS multilayer has a relative smooth surface. Experiment results indicate that STS multilayer is a promising insulator for the low drive voltage CuPc-based TFTs.
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