Abstract
Abstract Copper nanowires/cellulose degradable flexible transparent conductor are processed at room temperature (RT) and systematically studied. The achieved copper nanowires/cellulose sample can have a sheet resistance of 9.4 Ω/sq and transmittance of 78%, comparable to the commercial ITO/PET, better than copper nanowires/PET. This RT sheet resistance is very stable before and after bending. Compared to copper nanowires/PET curled and invalid at 150 °C, copper nanowires/cellulose can bake 250 °C and the according sheet resistance becomes 12.2 Ω/sq, showing the an outstanding heat stability. Moreover, the cellulose could be applied as dielectric layer and Cu nanowires were acted as back electrodes in the MoS2 field effect transistors (FETs) with a field effect mobility of 52.44cm2v−1s−1, extremely promising for a practical application in electronic devices.
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