Effects of N‐Ion Implantation on the Electrical and Photoelectronic Properties of MoS2 Field Effect Transistors

Abstract

Ion implantation is widely used in the semiconductor industry as an important method of controlling the performance of semiconductor materials. As a 2D material with fantastic physical characteristics, MoS2 has been receiving extensive attention for its potential applications in electronic devices. N element is an impurity objectively existing in semiconductors. It may come from the semiconductor manufacturing process or the environment. Therefore, the effect of N element implantation on the material, electrical, and photoelectronic properties of MoS2 field effect transistor (FET) is reported. The results of Raman and photoluminescence (PL) shows that N‐ion implant caused the expansion of the MoS2 lattice and the disappearance of the characteristic peaks of PL. The prepared MoS2 FET exhibits a slow photoelectric response to 254 nm UV, and a fast photoelectric response to 650 and 532 nm lasers. After ion implant and annealing, the electrical performance and photocurrent of the MoS2 FET are significantly degraded. The research has a guiding role in impurity control in the semiconductor manufacturing process.