Abstract
Copper chemical vapor deposition (Cu CVD) from Cu(hfac)vinyltrimethylsilane was studied using a low pressure chemical vapor deposition (LPCVD) system of a cold-wall vertical reactor. It was found that the resistivity of the chemical vapor deposited Cu films was dependent on the film's microstructure and impurity content, which in turn were dependent on the deposition conditions. Using H2 as the carrier gas, we were able to deposit Cu films of low impurity content at deposition rates as high as 150 Å/min. The lowest resistivity Cu films can be deposited at a temperature of 180°C and a pressure of 300 mTorr.
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