Abstract
Converse piezoelectric effect on the electron tunneling across a tunnel junction with a multiferroic barrier is investigated theoretically. It is found that the spin filtering, tunnel magnetoresistance (TMR), and tunnel electroresistance (TER) are enhanced (reduced) due to the presence of the strain in the barrier when the electrical polarization is oriented antiparallel (parallel) to the applied field. The TMR and TER can even increase with the increasing applied voltage when the converse piezoelectric effect is very strong in the barrier, which is totally different from the voltage dependence in the junction with the barrier without piezoelectric effect.
Published Version
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