Abstract
Conventional angle-dependent ferromagnetic resonance (FMR) measurements on an epitaxial (001) Fe film grown on a GaAs substrate were performed as a function of the orientation of the external magnetic field Bext for three configurations: One with Bext in the film plane and two with Bext out of plane starting in plane in different crystallographic orientations. From these measurements the magnetization M, the crystalline anisotropy constants K1 and K2, the surface anisotropy Ks and an additional uniaxial anisotropy Ku were deduced self-consistently. The temperature dependence of K1 and M was investigated for the in-plane [110] orientation in the range from 100 to 570 K. In addition, locally resolved photothermally modulated FMR measurements were carried out to study the homogeneity of the magnetization and of the crystalline anisotropy across the film. Disturbances of both magnetic parameters as a function of position were observed which are related to local inhomogeneities in the semiconducting substrate.
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